Qspeed H-Series Diodes

Description

Qspeed™ diodes have the lowest QRR of any Silicon diode. Their recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.

Product Highlights

Features

  • Now available in TO-263 (D2PAK) package
  • Low QRR, Low IRRM, Low tRR
  • High dIF/dt capable (1000A/µs)
  • Soft recovery

Benefits

  • Increases efficiency
    • Eliminates need for snubber circuits
    • Reduces EMI filter component size & count
  • Enables extremely fast switching

Applications

  • Power Factor Correction (PFC) Boost Diode
  • Motor drive circuits
  • DC-AC Inverters

 

Related Information

Simulate Qspeed diodes on PowerEsim

Power Integrations has partnered with PowerEsim to bring you a fast and accurate way to simulate the superior performance of Qspeed products. Follow the link by clicking on the PowerEsim logo below.

PowerEsim_90_90.gif

 

Technical Articles

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Applications

Component Selection Guide

DatasheetVRRM
MAX
IF<AVG>
TJ
=150°1
VF<TYP>
TJ
=150°
QRR
TJ
=25°
QRR
TJ
=125°
QH03TZ6002 600 V 3 A 2.1 V 5.8 nC 14.8 nC
QH03BZ600 600 V 3 A 2.1 V 5.8 nC 14.8 nC
QH05TZ600 600 V 5 A 2.2 V 6.5 nC 18.9 nC
QH05BZ600 600 V 5 A 2.2 V 6.5 nC 18.9 nC
QH08TZ600 600 V 8 A 2.2 V 8.0 nC 25.5 nC
QH08BZ600 600 V 8 A 2.2 V 8.0 nC 25.5 nC
QH12TZ600 600 V 12 A 2.3 V 9.2 nC 30 nC
QH12BZ600 600 V 12 A 2.3 V 9.2 nC 30 nC

NOTES

  1. Temperatures are in degrees celsius (°C).
  2. All parts are available in the TO-220 and TO-263 (D2PAK) package types.

Product Documents

Product Video

Qspeed Diodes - Introduction
Qspeed - Fundamentals

Qspeed - PFC
Qspeed - Output Rectifiers
Qspeed - Inverters